| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield and reliability of a device by removing an impurity layer produced after dry etching. SOLUTION: P type buried diffusion layers 2 are formed on an element isolation area of a P type Si substrate 1 and a division part area between a photodiode II and an NPN transistor I respectively, and an N type buried diffusion layer 3 is formed in an area of an NPN transistor I. Thereafter, an N type epitaxial layer 4 is formed so as to cover the whole face of the P type Si substrate 1. Next, a through oxide film 5 is formed on the whole face of an N type epitaxial layer 4. Next, a prescribed film is formed by a dry etching process on the through oxide film 5, after the dry etching process, an oxide film surface removing process removing the surface of the through oxide film 5 is performed, and thereafter, an impurity layer is effectively removed by injecting ions through the through oxide film 5 and the prescribed film downward of the films.
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