发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device manufacturing method comprising the steps of preparing a first substrate (10) including an integrated circuit chip (12), a first connection terminal electrically connected to a terminal of the integrated circuit chip, and a first connection portion (16a, 17a) spaced from the first connection terminal, preparing a second substrate (20) including a second connection terminal electrically connected to the first connection terminal and a second connection portion (23a, 24a) spaced from the second connection terminal, providing a connecting metallic material portion (30) on the first or second connection portion, and interconnecting the first and second connection portion through the metallic material portion by thermocompression bonding to fabricate a laminate of the first and second substrates. |
申请公布号 |
WO03030260(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
WO2002JP09826 |
申请日期 |
2002.09.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;YOSHIMURA, ATSUSHI |
发明人 |
YOSHIMURA, ATSUSHI |
分类号 |
H01L25/18;H01L21/98;H01L23/498;H01L25/065;H01L25/10;H01L25/11 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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