| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si-H bond and has an Si-H density per unit area of 1x1015 cm-2 or less.
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| 申请公布号 |
US6538271(B2) |
申请公布日期 |
2003.03.25 |
| 申请号 |
US20010874309 |
申请日期 |
2001.06.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAIDA SHIGEHIKO;TSUNASHIMA YOSHITAKA |
| 分类号 |
C23C16/02;C23C16/34;H01L21/314;H01L21/318;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
C23C16/02 |
| 代理机构 |
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代理人 |
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