发明名称 Substrate processing apparatus and a method for fabricating a semiconductor device by using same
摘要 A substrate processing apparatus includes at least two processing units provided around a substrate transfer chamber including a substrate transfer device for transferring substrates, wherein said at least two processing units include at least one batch processing unit, an M number of product substrates being processed simultaneously in one batch process with M being set to be less than or equal to the number of product substrates carried by a product substrate carrier, and all the product substrates contained in a product substrate carried by the product substrate carrier being processed in one batch process of said at least one batch processing unit. A method for fabricating a semiconductor device includes the step of sequentially processing plural product substrates in at least two processing units arranged around a substrate transfer chamber.
申请公布号 US2003053893(A1) 申请公布日期 2003.03.20
申请号 US20020230181 申请日期 2002.08.29
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MATSUNAGA TATSUHISA;SEKIYAMA HIROSHI;NOTO KOUICHI
分类号 B65G49/00;C23C16/44;C23C16/54;H01L21/02;H01L21/31;H01L21/677;(IPC1-7):H01L21/205 主分类号 B65G49/00
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