发明名称 |
Substrate processing apparatus and a method for fabricating a semiconductor device by using same |
摘要 |
A substrate processing apparatus includes at least two processing units provided around a substrate transfer chamber including a substrate transfer device for transferring substrates, wherein said at least two processing units include at least one batch processing unit, an M number of product substrates being processed simultaneously in one batch process with M being set to be less than or equal to the number of product substrates carried by a product substrate carrier, and all the product substrates contained in a product substrate carried by the product substrate carrier being processed in one batch process of said at least one batch processing unit. A method for fabricating a semiconductor device includes the step of sequentially processing plural product substrates in at least two processing units arranged around a substrate transfer chamber.
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申请公布号 |
US2003053893(A1) |
申请公布日期 |
2003.03.20 |
申请号 |
US20020230181 |
申请日期 |
2002.08.29 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MATSUNAGA TATSUHISA;SEKIYAMA HIROSHI;NOTO KOUICHI |
分类号 |
B65G49/00;C23C16/44;C23C16/54;H01L21/02;H01L21/31;H01L21/677;(IPC1-7):H01L21/205 |
主分类号 |
B65G49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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