| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage currents between the gate electrodes of a semiconductor device, while maintaining the dimensional precision and heights of the electrodes. SOLUTION: In the gate electrodes 4 of the semiconductor device having nitride films 8 on their tops, oxide films 7 are formed by means of, for example, a lamp heater. Consequently, the leakage currents between the electrodes can be suppressed even when silicon foreign matters redeposit between the electrodes 4 in the succeeding cleaning process. Since the oxide films 7 are formed only on the side faces of the electrodes 4, the films on the top faces of the electrodes 4 are not reduced in the forming step of the oxide films 7. In addition, deterioration of the dimensional precision of the electrodes 4 can be suppressed, because it is not required to make a gate electrode forming material film 3 thicker in advance for maintaining the heights of the electrodes 4. |
