| 摘要 |
PROBLEM TO BE SOLVED: To machine an aluminum nitride film or a gallium nitride film on the aluminum gallium nitride film with high etching selection ratio. SOLUTION: The mixed gas of argon and chlorine is introduced from a gas supply apparatus 2 into a vacuum container 1, at the same time, exhaust is made by a turbo-molecule pump 3 as an exhaust apparatus, specific pressure is maintained inside the vacuum chamber 1, and at the same time 100 MHz high-frequency power is supplied to an antenna 5 by a high-frequency power supply 4 for antennas, thus generating a plasma in the vacuum chamber 1, and supplying a 90 MHz high-frequency power to the substrate when etching a gallium nitride film on the aluminum nitride film formed on a substrate 7 placed on a substrate electrode 6.
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