METHOD FOR FABRICATING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact hole of a semiconductor device is provided to control the stress applied to a semiconductor substrate in a subsequent process for etching a self-aligned contact hole by forming a barrier layer on the entire semiconductor substrate in a chamber wherein the volume of the chamber is minimized and SiH2 gas and NH3 gas are mixed in a proper ratio. CONSTITUTION: The barrier layer(120) is formed on the semiconductor substrate(100) having a wordline(110) in a single chamber whose volume is minimized. An interlayer dielectric(130) is stacked on the barrier layer. An exposure and development process are carried out to form a self-aligned contact(140).