SEMICONDUCTOR MEMORY DEVICE HAVING PRECHARGE MODE AND METHOD FOR PRECHARGING BIT LINE COUPLES

摘要

PURPOSE: A semiconductor memory device having a precharge mode and a method for precharging bit line couples are provided to improve a memory access time by reducing a precharge time. CONSTITUTION: A plurality of bit line pairs are connected with a plurality of memory cell arrays. A plurality of precharge circuits are used for precharging the plural bit line pairs in a precharge mode. A switch transistor is used for connecting the one bit line of one bit line pair with a neighboring bit line of a neighboring bit line pair in the precharge mode. The switch transistor is installed at an opposite side to the precharge circuit of the bit line pair. The switch transistor is formed with a MOS transistor. A sense amplifier detects a fine voltage from a memory device of a corresponding address if a control signal of a word line and a control signal(BS0) of a decoupling circuit are applied. The sense amplifier amplifies the detected fine voltage to a VDD and a VSS level.