发明名称 SILICON-ON-INSULATOR STRUCTURE FOR MANUFACTURING SEMICONDUCTOR DEVICES AND ITS PRODUCTION METHOD
摘要 FIELD: microelectronics. SUBSTANCE: microelectronic structure designed for manufacturing microactuators, microphones, field-effect transistors, electret components, and the like includes silicon-containing semiconductor substrate as well as inorganic and organic insulators. Organic insulator is formed from polyamide having rigid chain structure. Substrate and insulators are formed to obtain three-layer planar sandwich composite with layers of inorganic insulator and organic polyamide insulator alternately disposed on substrate. Layer thickness of organic polyamide insulator having rigid chain structure is 1-40 nm. Method for producing microelectronic structure is also given in description of invention. EFFECT: enhanced reliability and electric stability of product obtained; facilitated manufacture. 3 cl, 3 dwg, 2 tbl, 4 ex
申请公布号 RU2193255(C1) 申请公布日期 2002.11.20
申请号 RU20020101249 申请日期 2002.01.08
申请人 TSENTR TEKHNOLOGIJ MIKROEHLEKTRONIKI 发明人 LUCHININ V.V.;KOZODAEV D.A.;GOLOUDINA S.I.;PASJUTA V.M.;KORLJAKOV A.V.;ZAKRZHEVSKIJ V.I.;KUDRJAVTSEV V.V.;SKLIZKOVA V.P.
分类号 H01L21/18 主分类号 H01L21/18
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