| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can deposit a dielectric thin film on a substrate at a practical rate and comprises a process for forming the dielectric thin film having a shallow surface roughness. SOLUTION: When a dielectric thin film is formed on a substrate by a chemical vapor growth method, a method of manufacturing a semiconductor device comprises the process for depositing a part of the dielectric thin film on the substrate, the process for heat-treating this dielectric thin film and moreover, the process for depositing the dielectric thin film at a deposition rate higher than that of the dielectric thin film.
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