发明名称 Optoelektronische Quantumwell-Vorrichtung
摘要 The optoelectronic mechanism has an active zone, made up of a number of different forbidden bandwidth layers running along a cavity. The layers have two energy levels in the conduction band forming quantum wells. On one side of the active zone there is a diffraction network (RZ) and an outer reflecting mirror (M1) whilst the other side of the zone has a reflecting mirror.
申请公布号 DE69620350(T2) 申请公布日期 2002.11.07
申请号 DE1996620350T 申请日期 1996.11.12
申请人 THALES, PARIS 发明人 DUBOZ, JEAN-YVES
分类号 G02F1/015;G02F1/017;G02F1/21;H01L27/14;H01L31/0232;H01L31/0352;H01S5/00;H01S5/183;H01S5/187;H01S5/34;H01S5/343 主分类号 G02F1/015
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