| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device that can prevent the interference and, in addition, can suppress the transmission loss between intersecting wiring layers. SOLUTION: This high-frequency semiconductor device is provided with a plurality of wiring layers 7 and 11 which is provided on a semiconductor substrate and constitutes transmission lines with a grounding plate 5 connected to a ground potential, an intersecting section in which the wiring layers 7 and 11 intersect each other through interlayer insulating films 8 and 10, and separated electrodes 9 which are selectively provided on the interlayer insulating films 8 and 10 in the intersecting section and connected to the ground potential. |
