发明名称 |
Wafer processing apparatus and wafer processing method using the same |
摘要 |
An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber which can be exhausted and has a plurality of gate valves, a plurality of vacuum processing chambers each of which can be connected to the transfer chamber via one of the gate valves, and a load lock chamber which can be exhausted and is connectable to a first gas feed line for feeding an oxygen-based gas into the load lock chamber. In a wafer processing method, a predetermined layer is formed on a wafer in one of the vacuum processing chambers. The predetermined layer on the wafer is oxidized in the load lock chamber or an oxygen atmosphere chamber.
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申请公布号 |
US2002132487(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020098029 |
申请日期 |
2002.03.13 |
申请人 |
LEE JONG-MYEONG;KIM BYUNG-HEE;LEE MYOUNG BUM;YUN JU-YOUNG;CHOI GIL-HEYUN |
发明人 |
LEE JONG-MYEONG;KIM BYUNG-HEE;LEE MYOUNG BUM;YUN JU-YOUNG;CHOI GIL-HEYUN |
分类号 |
C23C14/56;C23C16/44;H01L21/00;H01L21/02;H01L21/285;H01L21/302;H01L21/461;H01L21/677;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
C23C14/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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