发明名称 ION IMPLANTATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion implantation device capable of implanting a plurality of ions at the same time. SOLUTION: The ions subjected to mass spectrometry by a mass spectrometry part are respectively guided to a plurality of beam paths following the mass spectrometry part to permit the implantation of the plurality of ions at the same time.
申请公布号 JP2002237273(A) 申请公布日期 2002.08.23
申请号 JP20010032921 申请日期 2001.02.08
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 IIZUKA AKIRA
分类号 C23C14/48;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 C23C14/48
代理机构 代理人
主权项
地址