| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material. |
