METHOD FOR FABRICATING PSEUDO SILICON-ON-INSULATOR SUBSTRATE USING SELECTIVE EPITAXIAL GROWTH PROCESS

摘要

PURPOSE: A method for fabricating a pseudo silicon-on-insulator(SOI) substrate using a selective epitaxial growth(SEG) process is provided to increase productivity by eliminating the necessity for an excessive selective epitaxial growth of a semiconductor layer, and to reduce a chip size by eliminating the need to form a separate area regarding a seed layer. CONSTITUTION: An insulation layer is formed on the semiconductor substrate(10). The insulation layer is patterned to remove the upper portion of the insulation layer in an active region and to form a concave portion. The insulation layer is patterned to form a path exposing the semiconductor substrate to the seed region of which at least a part overlaps the active region. A selective epitaxial growth is performed regarding the semiconductor layer by using the semiconductor substrate exposed to the seed region to fill the concave portion with the semiconductor layer. The semiconductor layer grown to a surface higher than the uppermost surface of the insulation layer is eliminated by a planarization-etch process. The semiconductor layer filling the concave portion and the semiconductor layer filling the path connecting the semiconductor substrate are oxidized by a thermal oxidation process. The thermal oxide layer formed on the surface of the semiconductor layer filling the concave portion is removed through a planarization-etch process in the thermal oxidation process.