发明名称 APPARATUS AND METHOD FOR REDUCING DIFFERENTIAL SPUTTER RATES
摘要 <p>A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.</p>
申请公布号 EP1183722(A1) 申请公布日期 2002.03.06
申请号 EP20010933686 申请日期 2001.03.12
申请人 FEI COMPANY 发明人 PHANEUF, MICHAEL, W.;LI, JIAN
分类号 B23K15/00;C23F4/04;G03F1/74;H01J37/305;H01L21/302;H01L21/3205;H01L23/52;(IPC1-7):H01L21/321 主分类号 B23K15/00
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