| 摘要 |
PROBLEM TO BE SOLVED: To provide a method to make an impurity layer by ion implantation of an impurity into an edge part in side part and of an active region to prevent generation of a parasitic transistor phenomenon or an edge transistor phenomenon along the edge part in the side part of the active region even when the active region is refined to the limit. SOLUTION: A shielding layer 23 is selectively formed on a single crystal silicon layer, an active region 25 is formed in the single crystal silicon layer using the shielding layer 23 as a mask and an impurity layer 26 is formed in the edge part of the side part of the active region 25 by implanting an impurity obliquely from the above, using the shielding layer 23 as a mask.
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