Semiconductor device having a dielectric film and a fabrication process thereof

摘要

A semiconductor memory device includes a memory cell capacitor for storing information, wherein the memory cell capacitor includes a capacitor insulation film of a double oxide on a lower electrode. The lower electrode has a layered structure of Ir/IrO2/Ir or Ru/RuO2/Ru acting as a diffusion barrier of oxygen or Pb. Further, the use of a Pt-Ir alloy is disclosed for the lower electrode.