| 摘要 |
PROBLEM TO BE SOLVED: To reduce particles in a reaction furnace and in a passage for feeding gaseous starting materials in a thin film deposition method by which gaseous starting materials in which aluminum chloride, titanium chloride and water are vaporized are alternately fed to a reaction furnace 10 to form an alternately laminated thin film of aluminum oxide and titanium oxide on a substrate. SOLUTION: A plurality of gaseous starting material feeding systems 30, 40 and 50 to feed gases into a reaction furnace 10 are provided in accordance with each gaseous starting material. In each gaseous starting material feeding system, by switching valves A4, T4 and H4 and valves A5, T5 and H5, gaseous nitrogen as inert gas can be fed as pulses to the inside of a passage 31 for feeding gaseous starting materials and the reaction chamber so as to generate the variation of pressure. Before a thin film deposition stage, this pulsating feed of gaseous nitrogen is successively performed so that timing is deviated per each gaseous starting material feeding system.
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