| 摘要 |
A semiconductor Mach-Zehnder modulator comprises a pair of phase modulator arm waveguides and a single driver for a push-pull modulation. A first electrode connected to p-type cladding layer of first modulator arm is maintained at a negative potential Vpi, a second electrode connected to n-type cladding layer of first modulator arm and p-type cladding layer of second modulator arm is driven by a drive voltage, and a third electrode connected to n-type cladding layer of second modulator arm is maintained at a ground potential. The drive voltage changes between Vpi, and Vpi/2 for push-pull modulation of both modulator arms.
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