| 摘要 |
A nonvolatile semiconductor memory device adapted for a semiconductor substrate includes a Dynamic Random Access Memory (DRAM) cell and a nonvolatile erasable programmable (NEP) transistor. The DRAM cell includes a control transistor having a first gate connected to a first word line, a first source connected to a first bit line, and a first drain connected to a storage capacitor, and data stored in the capacitor is controlled by the control transistor. The NEP transistor has a second gate connected to a second word line, a second source connected to the first drain, and a second drain connected to a second bit line. Wherein, the data stored in the capacitor and nonvolatile erasable programmable transistor is transmitted and exchanged by a transfer circuit through the first and second bit lines.
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