发明名称 |
Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate |
摘要 |
A silicon carbide thin film is epitaxially grown by an MBE or the like method with silicon atoms 2 being maintained to be in excess of carbon atoms on a growth surface 1a of a silicon carbide crystal in a substrate 1. A silicon carbide substrate with a good crystallinity is thereby achieved at a low temperature with a good reproducibility. This crystal growth is possible at a low temperature of 1300° C. or lower, and the productions of a high-concentration doped film, a selectively grown film, and a grown film of a cubic silicon carbide on a hexagonal crystal are achieved. In crystallizing a cubic silicon carbide on a hexagonal crystal, the use of an off-cut surface inclined towards a <1{overscore (1)}00> direction is effective to prevent an occurrence of twin.
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申请公布号 |
US6270573(B1) |
申请公布日期 |
2001.08.07 |
申请号 |
US19990297129 |
申请日期 |
1999.04.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITABATAKE MAKOTO;UCHIDA MASAO;TAKAHASHI KUNIMASA |
分类号 |
H01L21/205;C30B23/02;H01L21/04;H01L21/20;H01L21/203;H01L29/04;H01L29/10;H01L29/24;H01L29/80;(IPC1-7):C30B25/18;C30B29/36 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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