| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which can enhance the selectivity ratio and improvement of etching form. SOLUTION: In an etching method for a film being the target of etching made on a substrate arranged within a processing chamber, the processing gas introduced into an air-tight processing chamber 104 consists of CF4, N2, and Ar, and the film being the target of etching consists of an upper organic polysiloxane film and a lower organic SiO2 film. The flow ratio of CF4 to N2 in the processing gas is substantially 1 <(flow of N2/flow of CF4)<=4. If (flow of N2/flow of CF4) is less than 1, it will cause etching stop, and deep etching will be unable. Otherwise, if (flow of N2/flow of CF4) is larger than 4, it will cause bowing, and the etching form will be disagreeable. Therefore, it is to be desired that the flow ratio of CF4 to N2 in the processing gas should be 1<=(flow of N2/flow of CF4)<=4.
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