| 摘要 |
PROBLEM TO BE SOLVED: To enhance uniformity of film thickness, and to realize uniform film formation with satisfactory yield in substrate treatment for realizing film formation on the surface of a substrate to be treated. SOLUTION: In this substrate-treating device 1, a substrate 17 to be treated is held in a reaction chamber 23, and while reaction gas is supplied to a direction in parallel with the substrate to be treated, the inside part of the reaction chamber is heated so that film formation on the substrate to be treated can be realized by a CVD treating method. In this case, a substrate-holding stand 83 for holding the substrate to be treated is provided with a placing plate for housing the substrate to be treated, and the shape of the placing plate is made almost similar to that of the substrate to be treated.
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