SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME

摘要

PURPOSE: To enable a semiconductor device which is equipped with a gate electrode of multilayered structure to be improved in reliability. CONSTITUTION: A gate electrode 7 is equipped with a polycrystalline silicon layer 3, a barrier layer 4, and a metal layer 5. For instance, the metal layer 5 is formed of W, and the barrier layer 4 is formed of RuO2. When the gate electrode 7 is formed, the metal layer 5 and the barrier 4 are etched, using at least either the barrier layer 4 or the polycrystalline silicon layer 3 as an etching stopper.