| 摘要 |
PURPOSE: A semiconductor storage is provided to reduce a cell region and to reduce the number of manufacturing processes by eliminating the need for a voltage supply line and a contact in a gain cell. CONSTITUTION: A semiconductor storage in provided with a write transistor(Q1) connected to a write word line(WWL) and a bit lie(BL), a read transistor(Q1) connected between a read word line(RWL) and the bit line(BL), while a gate is connected to the source of the write transistor(Q1), and a capacitor(C) that is connected between the gate and drain of the read transistor(Q2). A parasitic capacitance(Cp) of the transistor and an external capacitor element are used individually or in combination for forming the capacitor(C). For example, a parasitic capacitance(Cp) and the external capacitor element are formed at a part where a gate electrode overlaps with a drain impurity region, and the external capacitor element is formed at a part where the gate electrode overlaps with the impurity region for forming the word line(RWL). Other external capacitor elements may by formed between the gate electrode and an upper an wiring layer.
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