| 摘要 |
PROBLEM TO BE SOLVED: To simplify manufacturing processes, reduce the amount of recesses, even when several tens of wafers are processed in batch and moreover realize a manufacturing method for semiconductor devices that can form large curvature of radius at the upper end part of a groove. SOLUTION: In this manufacturing method, a pat oxide film 2, an amorphous silicon or polycrystalline silicon film 17 and an oxidation preventing film 3 are deposited on a silicon substrate 1, and these films are patterned ((a) to (f)). Thereafter, the pat oxide film 2 is made to withdraw backward and the silicon substrate 1 and amorphous silicon or polycrystalline silicon film 17 are removed with the isotropic etching to form a groove ((g)). Thereafter, the pat oxide film 2 is diffused backward and subjected to high temperature oxidation ((h), (i)). Thereby, it is possible to realize a shape, in which even if the oxidation process is not increased to the silicon substrate 1 at the upper end part of groove, electrical failures of transistor will not be generated.
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