DEPOSITION APPARATUS

摘要

PURPOSE: An apparatus for depositing semiconductor thin films is provided to allow a reaction gas to form a laminar flow in a semiconductor wafer and extend the interior cleaning period of a reaction container by reducing a region exposed to the reaction gas. CONSTITUTION: An apparatus for depositing semiconductor thin films includes a reactor block(10) in which a semiconductor wafer is located. A shower head plate(20) is located on the top of the reactor block(10) and constantly maintains a given pressure. The first, second and third connection pipes(51,52,53) are connected to the shower head plate(20) and supplies the reaction gas. A diffusion plate is installed to the shower head plate(20) and sprays the reaction gas into the reactor block(10). A nozzle exhausts the gas within the shower head plate(20) to the outside. An inert gas supply source is connected to the shower head plate(20) and supplies inert gas gases. An euro is formed in the shower head plate(20) or the diffusion plate and forms a curtain on the internal circumference of the reactor block(10) by spraying the inert gas.