| 发明名称 |
POLYSILICON DEFINED DIFFUSED RESISTOR |
| 摘要 |
A resistor comprised of a diffused impurity region in a semiconductor substrate, an insulated gate surrounding and defining the resistor, and a pair of separated conductive contacts to the diffused region within the boundary of the insulated gate for applying and receiving current passing through the resistor.
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| 申请公布号 |
CA2179246(C) |
申请公布日期 |
2000.10.24 |
| 申请号 |
CA19962179246 |
申请日期 |
1996.06.17 |
| 申请人 |
|
发明人 |
INIEWSKI, KRIS;GERSON, BRIAN D.;HARRIS, COLIN;LEBLANC, DAVID |
| 分类号 |
H01L27/04;H01L21/822;H01L27/06;H01L27/08;H01L29/8605;(IPC1-7):H01L27/02;H01L27/01;H01L27/092 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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