| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method by which a semiconductor device having a barrier metallic layer can be manufactured, and the occurrence of such a case is prevented that the barrier metallic layer is not completely etched off due to TiF and TiO produced on the surface of the metallic layer, and short circuits occur in metallic wiring due to the left part of the metallic layer. SOLUTION: The barrier metallic layer 14 on a semiconductor substrate 10 is irradiated with plasma 40 of an N2 gas and, at the same time, the substrate 10 is heated with a heater 50. Since the TiF and TiO in an affected section 20 produced on the surface of the metallic layer 14 are returned to TiN by the plasma 40, the hindrance to the etching of the metallic layer 14 are removed. Therefore, the metallic layer 14 is completely etched off, and the occurrence of short circuits in metallic wiring can be prevented.
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