| 摘要 |
PROBLEM TO BE SOLVED: To efficiently prevent oxidation by forming wiring made of copper on a substrate, and by covering the exposure surface of the wiring with a protection film made of a nickel plating film. SOLUTION: On a semiconductor substrate 101, an interlayer insulation film 102 made of an organic insulator with a low dielectric constant such as polybenzaoxazole and benzocyclobutene is formed. In the interlayer insulation 102, a groove 102a is formed, and wiring 103 made of copper is formed in the groove 102a. Also, on the interface between the wiring 103 and the groove 102, a barrier film 104 that is made of chrome and suppresses the diffusion of the copper is formed. Furthermore, in the case of formation by a damascene method, the upper surface of the wiring 103 is exposed on the surface of the interlayer insulation 102, and the exposure surface of the wiring 103 is covered with a protection film 105 made of nickel, thus efficiently preventing oxidation.
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