发明名称 Quartz glass crucible for producing silicone single crystal and method for producing the crucible
摘要 A method for producing an improved quartz glass crucible for pulling up silicon single crystals comprises forming a premolding by feeding powdered silicon dioxide into the mold and by then forming it into a layer along the inner surface of the mold; forming a crucible base body of a translucent quartz layer by heating the premolding from the inner side, thereby partially melting the powdered silicon dioxide, followed by cooling and solidifying the melt; forming a crystallization-promoter containing layer along the internal wall surface of the crucible body by scattering the crystallization promoter on the surface of the internal wall of the crucible body during or after forming the crucible base body; and forming a synthetic quartz glass inner layer by scattering and fusing a powder of silicon dioxide on the crystallization promoter-containing layer that is formed along the internal wall surface of the crucible base body.
申请公布号 US6106610(A) 申请公布日期 2000.08.22
申请号 US19980163255 申请日期 1998.09.30
申请人 HERAEUS QUARZGLAS GMBH & CO. KG;SHIN-ETSU QUARTZ PRODUCTS CO., LTD. 发明人 WATANABE, HIROYUKI;SATO, TATSUHIRO
分类号 C03B19/09;C30B15/10;C30B35/00;(IPC1-7):C30B15/20 主分类号 C03B19/09
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