发明名称 |
Low voltage, low power static random access memory cell |
摘要 |
A ten transistor low voltage, low power static random access memory cell (10) includes a first inverter (12) cross-coupled to a second inverter (18). A series combination of a first pass transistor (24) and a first bitline select transistor (28) is connected between an output node (13) of the first inverter (12) and a first bitline (36). A first write pass transistor (32) is placed in parallel with the first pass transistor (24). A series combination of a second pass transistor (26) and a second bitline select transistor (30) is connected between an output node (17) of the second inverter (18) and a second bitline (38). A second write pass transistor (34) is placed in parallel with the second pass transistor (26).
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申请公布号 |
US6091626(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19980047620 |
申请日期 |
1998.03.25 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MADAN, SUDHIR K. |
分类号 |
G11C11/412;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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