| 摘要 |
The intermetallic compound used to form a liner in the wiring of the semiconductor device is formed from a compound of a main component of the metal film used as the wiring and at least one metal material made to be dissolved in the main component to form a solid solution, or from a compound of at least two metal materials capable of forming a solid solution with the main component. The metal elements constituting the intermetallic compound are made to be dissolved in the metal film to form a solid solution during a heat treatment, and thus the barrier formed by the liner, which has been a problem studied to be solved, can be absent. Therefore, a semiconductor device excellent in resistance against electromigration and a highly reliable wiring process can be obtained.
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