METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A semiconductor fabrication method is provided to improve a contact resistance between a gate and a bit line by using an RTA(rapid thermal annealing). CONSTITUTION: A gate electrode having a polysilicon layer(20) and a tungsten silicide(25) is formed, and source and drain regions(50) are formed. Then, a first contact hole(70) connected to the gate electrode and a second contact hole(80) connected to the drain region(50) are formed. A bit line(100A) connected to the gate electrode via the first contact hole(70) and a word line(100B) connected to the drain through the second contact hole(80) are formed. For removing an oxide(55) formed at interface connected to the bit and word lines(111A,.100B), an RTA process is performed.