发明名称 |
Thin film transistor and method for fabricating same |
摘要 |
A method for fabricating a thin film transistor having a substrate includes the steps of forming a gate electrode on the substrate and forming a gate insulating layer on the gate electrode and the substrate. Source and drain electrodes are formed having side surfaces facing each other on the gate insulating layer. An active layer is formed over the source and drain electrodes and the gate insulating layer. A silicide layer is formed on at least one of the side surfaces of the source and drain electrodes.
|
申请公布号 |
US6057181(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19990225828 |
申请日期 |
1999.01.06 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KIM, WOONG-KWON |
分类号 |
H01L29/786;H01L21/336;H01L29/417;H01L29/45;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|