| 摘要 |
PURPOSE: A method for manufacturing field emission display(FED) and the spacer by etching velocity corresponding to the crystallized face of a silicon substrate is provided. CONSTITUTION: By thermal oxidation or sputtering, a silicon oxide layer(18b') is produced at the both sides of a first silicon board(18a') having 110 face. Each photoresist(18c) is sprayed on the both sides of the first silicon board(18a'), and some parts on the photo regist(18c) are exposed to ultra violet wavelength range to form a mask. And then, the mask of photoresist(18c) is removed after forming silicon oxide film by patterning the silicon oxide layer(18b'). Etching the first silicon board by the wet etching method using silicon oxide film(18b) as a mask leads the first board to meet the 111 face having right angle. As the 111 face has low etching velocity compared to the etching velocity of the 110 face, A spacer(18) is formed by the anisotropy which do not etch toward the 111 face. A field emission display element is good for outside pressure under high vacuum state in the case the spacer is inserted and sealed between a front substrate and a back substrate.
|
