A CRYSTAL DEFECT-FREE AND FACET-FREE PROCESS FOR SELECTIVE EPITAXIAL GROWTH,申请号KR19970061587-传众专利搜索

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发明名称	A CRYSTAL DEFECT-FREE AND FACET-FREE PROCESS FOR SELECTIVE EPITAXIAL GROWTH
摘要
申请公布号	KR100243348(B1)	申请公布日期	2000.02.01
申请号	KR19970061587	申请日期	1997.11.20
申请人	KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE	发明人	LEE, SOO-MIN;JO, DUCK-HO;RYUM, BYUNG-RYUL;HAN, TAE-HYUN
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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