METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wiring formation method of a semiconductor device is provided to effectively protect components from the outside by preventing a void of passivation film from generating. CONSTITUTION: The metal wiring comprises the structure that a barrier metal film(23a), a wiring metal film(24a) and a ARC(Anti-Reflective Coating) film(25a) are deposited in this order. The method includes the steps of: forming a mask patterning film(26a) having a best selective ratio for the wiring metal film on the ARC film; etching the mask patterning film and the ARC film by a first etching process and then forming a mask pattern; forming a ARC film pattern having a profile identical to a subsequent wiring profile; etching the wiring metal film and the barrier metal film by a second etching process using the mask pattern as etching mask and then forming the wiring; and forming the passivation film on the whole substrate. The barrier metal film is Ti/TiN film, the wiring metal film is aluminum film, the ARC film is TiN film, and a material film for the mask pattern is made up of the oxide film or nitrogen film. Also, the first etching process progresses using fluorine-based gases and the passivation film is made up of the HDP(High Density Plasma) oxide film.