发明名称 |
METHOD FOR MANUFACTURING AN INDIUM BUMP USING A PLASMA |
摘要 |
PURPOSE: An H2 plasma reflow method is provided to improve a bonding reliability and a fatigue life by using an indium bump used as an interconnection of IRFPA(infrared focal plane array) having high height. CONSTITUTION: The method comprises the steps of depositing a protective layer on a chip; opening a portion of a conductive metal pad using a photoresist pattern as a mask; depositing an UBM(under bump metallurgy) on the resultant structure; removing the photoresist pattern to form a diffusion prevention pattern; forming an indium bump having a wide cross sectional area compared to the UBM; and reflowing the indium bump by exposing the indium bump to a plasma.
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申请公布号 |
KR20000000778(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980020623 |
申请日期 |
1998.06.03 |
申请人 |
AGENCY FOR DEFENSE DEVELOPMENT |
发明人 |
CHOE, JONG HWA;KIM, HYEONG HO;LEE, HUI CHEOL |
分类号 |
H01L23/528;(IPC1-7):H01L23/528 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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