发明名称 METHOD FOR MANUFACTURING AN INDIUM BUMP USING A PLASMA
摘要 PURPOSE: An H2 plasma reflow method is provided to improve a bonding reliability and a fatigue life by using an indium bump used as an interconnection of IRFPA(infrared focal plane array) having high height. CONSTITUTION: The method comprises the steps of depositing a protective layer on a chip; opening a portion of a conductive metal pad using a photoresist pattern as a mask; depositing an UBM(under bump metallurgy) on the resultant structure; removing the photoresist pattern to form a diffusion prevention pattern; forming an indium bump having a wide cross sectional area compared to the UBM; and reflowing the indium bump by exposing the indium bump to a plasma.
申请公布号 KR20000000778(A) 申请公布日期 2000.01.15
申请号 KR19980020623 申请日期 1998.06.03
申请人 AGENCY FOR DEFENSE DEVELOPMENT 发明人 CHOE, JONG HWA;KIM, HYEONG HO;LEE, HUI CHEOL
分类号 H01L23/528;(IPC1-7):H01L23/528 主分类号 H01L23/528
代理机构 代理人
主权项
地址