发明名称 |
Method and apparatus for protecting a device against voltage surges |
摘要 |
A structure for the protection of a high-voltage pad includes a lateral bipolar transistor, an N-type diffusion of which, connected to the pad to be protected, is made in an N-type tub with a zone that extends laterally outside the tub in the base. A P-type implantation is made on the entire substrate outside the N-type tub except in the region in which the zone extends.
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申请公布号 |
US5981323(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19970854840 |
申请日期 |
1997.05.12 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
FOURNEL, RICHARD;MARINET, FABRICE |
分类号 |
H01L27/02;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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