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发明名称
Nichtflüchtiger Halbleiterspeicher mit Programmierbereichen durch Ein- und Ausstossen von Ladungsträgern in oder aus einer schwebenden Steuerelektrode
摘要
申请公布号
DE69511314(D1)
申请公布日期
1999.09.16
申请号
DE19956011314
申请日期
1995.04.19
申请人
NEC CORP., TOKIO/TOKYO
发明人
SHINMORI, MASAHIRO
分类号
H01L21/8247;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/788
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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