发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a noise-resisting semiconductor storage device which is stable against noise. SOLUTION: A power source circuit 126, which becomes a noise generating source, and an oscillation circuit, etc., are arranged concentrically, and their outer circumference is surrounded by a guard ring GRD. This guard ring GRD is provided, on such a manner that a bonding pad PD is arranged at least on a part of its upper section. Since the guard ring GRD is provided taking full advantage of the region located under the bonding pad PD, an effective noise measure can be provided while the increase in chip area is suppressed.
申请公布号 JPH11214654(A) 申请公布日期 1999.08.06
申请号 JP19980016027 申请日期 1998.01.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORISHITA GEN;AMANO TERUHIKO;ARIMOTO KAZUTAMI;TANIZAKI TETSUSHI;FUJINO TAKESHI;TSURUTA TAKAHIRO;KINOSHITA MITSUYA;KOBAYASHI MASAKO
分类号 G11C11/401;G11C5/14;H01L21/761;H01L21/8242;H01L23/552;H01L23/58;H01L27/02;H01L27/092;H01L27/10;H01L27/108 主分类号 G11C11/401
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