| 发明名称 |
Method for fabricating a silicon-on-sapphire wafer |
| 摘要 |
A method for fabricating a silicon-on-sapphire wafer for processing by silicon-wafer-processing equipment. A layer is deposited on a backside of a silicon-on-sapphire wafer, the layer having optical and electrical properties of silicon, wherein the silicon-on-sapphire wafer may be sensed by a sensor designed to sense a presence of a silicon wafer.
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| 申请公布号 |
US5877094(A) |
申请公布日期 |
1999.03.02 |
| 申请号 |
US19940224451 |
申请日期 |
1994.04.07 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EGLEY, JAMES L.;GUT, GEORGE M.;KOCH, DANIEL J.;MATUSEWIC, MICHAEL A. |
| 分类号 |
H01L27/12;H01L21/02;H01L21/205;H01L21/67;(IPC1-7):H01L21/76 |
主分类号 |
H01L27/12 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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