EPITAXIAL SUBSTRATE FOR HIGH-INTENSITY LED AND METHOD OF MANUFACTURING THE SAME

摘要

An epitaxial substrate for a high-intensity LED is disclosed which comprises a double-hetero structure epitaxial layer (1 to 6) formed by vapor phase epitaxy and an epitaxial layer (7) formed by liquid phase epitaxy on said double-hetero structure epitaxial layer (1 to 5), said double-hetero structure epitaxial layer (1 to 6) being formed by removing a compound semiconductor substrate (1) after said double-hetero structure epitaxial layer (1 to 6) has been formed thereon. The double-hetero epitaxial layer (1 to 6) is formed using an MOCVD process or an MBE process, and the epitaxial layer (7) is formed using an LPE process and so the resultant substrate (2 to 7) is formed by a process which shows the benefits of both processes, that is mixed-crystal ration and film thickness controllability, excellent reproducibility and uniformity of the MOCVD process and the high rate of growth of the LPE process.