| 摘要 |
PROBLEM TO BE SOLVED: To provide a platinum thin-film forming method of adjusted orientation, which prevents the oxidation of a diffusion barrier layer formed at the lower part of a platinum electrode to be used as the lower electrode of a capacitor or a conductive layer, such as an adhering layer, and a platinum thin film formed by the method. SOLUTION: A platinum thin film, which is mainly used as the lower electrode of the capacitor of a DRAM cell or a nonvolatile intense dielectric memory cell, is vapor-deposited in two processes. A first platinum thin film part 108 is vapor- deposited by inactive gas atmosphere (Ar, Ne, Kr and Xe) and a second platinum thin-film part 112 is vapor-deposited by an atmosphere, including at least one of ozone, nitrogen, N2 O and the mixed gas of these. Heat treatment is applied to those films in a vacuum atmosphere to remove oxygen and/or nitrogen introduced at the time of vapor-depositing the part 112. The platinum thin film 116 given heat treatment prevents the oxide from being formed at a functional intermediate film 104, such as a diffusion barrier layer or an adhering layer arranged under the lower electrode of the platinum thin film. |
