| 摘要 |
<p>PROBLEM TO BE SOLVED: To specify the film thicknesses of the anodically oxidized films formed on the surfaces of the gate electrodes of thin-film transistors(TFTs) or the one conductor thin film of MIM elements and the film thicknesses of the anodically oxidized films formed on the surface of lines for auxiliary capacitors for forming the auxiliary capacitors between the films described above and pixel electrodes to respectively optimum values. SOLUTION: In the case of the liquid crystal display device having the TFTs, an anodic oxidation treatment is executed for a prescribed time by impressing ordinary, i.e., relatively high voltage on a scanning signal line 7 via a first power feed line for anodic oxidation and impressing the voltage lower by a prescribed value than the ordinary voltage described above on a line 9 for auxiliary capacitors via a second power feed line 11 for anodic oxidation. The anodically oxidized film of the relatively large film thickness is then formed on the surface of the scanning signal line 7 and the anodically oxidized film of the relatively small film thickness is formed on the surface of the line 9 for auxiliary capacitors.</p> |
