| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiinsulative InP single crystal of <=10% and <=20% in the mobility in a wafer plane and the uniformity of resistivity, respective and a process for production thereof. SOLUTION: Plural InP wafers 1 are lined up apart spaced intervals within an ampoule 2. Red phosphorus 3 of such an amt. at which a phosphorus vapor pressure atmosphere of <=15 atm above the dissociation pressure of InP attaining equilibrium at a heat treatment temp. is generated is arranged in the ampoule 2 and the ampoule is vacuum sealed. The ampoule is installed into a horizontal type heating furnace 6 where the ampoule is heated and held for a prescribed time to and at the heat treatment above 930 deg.C and below 1000 deg.C (first heat treatment stage). In succession, the ampoule is cooled down to room temp. and after the respective wafers 1 are taken out of the ampoule 2, the respective wafers 1 are vacuum sealed together with the red phosphorus 3 of a suitable amt. at which the phosphorus vapor pressure atmosphere of 5 to 50 atm is generated in the ampoule 2 into another ampoule 2. The ampoule 2 is installed in the horizontal type heating furnace 6 where the ampoule is heated and held for the prescribed time to and at the heat treatment temp. over 640 deg.C and below 900 deg.C (second heat treatment stage). |
