首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Phosphoramidates and phosphoramidothioates
摘要
申请公布号
US3281504(A)
申请公布日期
1966.10.25
申请号
US19650506892
申请日期
1965.11.08
申请人
THE DOW CHEMICAL COMPANY
发明人
BLAIR ETCYL H.;WASCO JOSEPH L.
分类号
C07F9/24
主分类号
C07F9/24
代理机构
代理人
主权项
地址
您可能感兴趣的专利
MUFFLER STRUCTURE OF EXPANSION DEVICE
METHOD FOR PROVIDING REALTY INFORMATION BY USING MOBILE TERMINAL
HIGH DENSITY-FLAT PANEL LAMP OF WHITE LEDS
LIQUID-CRYSTAL POLYESTER RESIN
DECKING SYSTEM AND ANCHORING DEVICE
TURBINE BLADE HAVING PLATFORM AND AIRFOIL EXTENDED FROM ROOT OF PLATFORM TO TIP
FUEL SUPPLY UNIT SUPPORT STRUCTURE OF VEHICLE TO ENHANCE VIBRATION RESISTANCE OF FUEL SUPPLY UNIT WITHOUT INCREASE OF NUMBER OF COMPONENTS
Road lane marker, has spiral joint spring whose diameter is equal to diameter of circle inscribed in triangular section of sleeve, which includes radial pin projecting towards exterior at sleeves anchoring end
Glass stopping unit for vehicle headlight, has external wing forming peripheral groove of body of lighting device, and one of two arms crossing exterior wing and engaging in portion of edge of glass
RUBBER-MODIFIED HIGH IMPACT POLYSTYRENE RESIN COMPOSITION EXHIBITING HIGH IMPACT RESISTANCE IN GOOD BALANCE WITH OTHER PERFORMANCE PROPERTIES
HI-TECH DIGITAL MULTI-FUNCTIONAL SOFA
IMAGING HEAD UNIT FOR PERFORMING RELATIVE MOVEMENT TO RESPECTIVE IMAGING SURFACE, IMAGING DEVICE HAVING THE SAME, AND IMAGING METHOD USING THE SAME
SANITARY NAPKIN CONTAINING FUNCTIONAL COMPOSITION
PLASTIC ROAD BOUNDARY BLOCK AND LUMINOUS PLASTIC FOOTWAY/ROADWAY BOUNDARY BLOCK
METHOD FOR CONTROLLING CLOCK DELAY OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FORMED THEREBY TO PERFORM TIMING CONTROL IN CONSIDERATION OF SYNCHRONIZATION OF CLOCK DELAY
CRYSTAL POLYMORPHISM OF NAFAMOSTAT MESILATE USEFUL AS DRUGS AND ITS PRODUCTION METHOD
LAMP HOUSING STRUCTURE OF SEMICONDUCTOR EQUIPMENT
APPARATUS FOR REMOVING PARTICLES FROM SURFACE OF DISC IN CMP EQUIPMENT
METHOD FOR FABRICATING MOS TRANSISTOR
CHEMICAL SOLUTION FOR REMOVING BPSG OR PSG LAYER OF SEMICONDUCTOR DEVICE